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NSI6642C - High Reliability Isolated Dual-Channel Gate Driver

This page provides the datasheet information for the NSI6642C, a member of the NSI6602NA High Reliability Isolated Dual-Channel Gate Driver family.

Features

  • Isolated dual channel driver.
  • Input side supply voltage: 3V to 18V.
  • Driver side supply voltage: up to 25V with UVLO.
  • 6A peak source and 8A peak sink output.
  • High CMTI: ±150kV/us typical.
  • 33ns typical propagation delay.
  • 6ns maximum delay matching.
  • 9ns maximum pulse width distortion.
  • Programmable deadtime.
  • Accepts minimum input pulse width 20ns.
  • Operation temperature: -40℃~125℃.
  • RoHS & REACH Compliance Safety Regulatory Approvals.

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Datasheet Details

Part number NSI6642C
Manufacturer NOVOSENSE
File Size 2.00 MB
Description High Reliability Isolated Dual-Channel Gate Driver
Datasheet download datasheet NSI6642C Datasheet
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Full PDF Text Transcription

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NSI66x2x High Reliability Isolated Dual-Channel Gate Driver Datasheet (EN) 1.1 Product Overview NSI66x2x is a family of high reliability isolated dualchannel gate driver ICs which can be configured as two low-side drivers, two high-side drivers, or a halfbridge driver. Each output could source 6A and sink 8A peak current with fast 33ns propagation delay and 6ns maximum delay matching. It is designed to drive power MOSFET, SiC, GaN, and IGBT transistors. The NSI66x2x provides 2500Vrms isolation per UL1577 in 5-mm x 5-mm LGA13 package, 3000Vrms isolation in SOP16 or SOP14 package, and 5700Vrms isolation in SOW16 or SOW14 package. System robustness is supported by 150kV/us typical common-mode transient immunity (CMTI).
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