Overview: NSI6601M Single-Channel Isolated Gate Driver
Datasheet (EN) 1.3 Product Overview
The NSI6601M is a single-channel isolated gate driver designed to drive IGBTs, power MOSFETs and SiC MOSFETs in many applications. It provides split output that controls the rise and fall times individually. It can source and sink 5A peak current. The NSI6601M is available in SOP8 or SOW8 package, and can support 3000VRMS and 5700VRMS isolation per UL1577 respectively. System robustness is supported by
150kV/μs minimum mon-mode transient immunity
(CMTI). The driver operates with a maximum supply voltage of 32V, while the input-side accepts from 3.1V to 17V supply voltage. Under voltage lock-out (UVLO) protection is supported by all the power supply voltage pins. Because of high driving current ability, excellent robustness, wide supply voltage range and fast signal propagation, NSI6601M is suitable for high reliability, power density and efficient switching power system.