Datasheet Details
| Part number | NSi6602-Q1 |
|---|---|
| Manufacturer | NOVOSENSE |
| File Size | 1.34 MB |
| Description | High Reliability Isolated Dual-Channel Gate Driver |
| Datasheet | NSi6602-Q1-NOVOSENSE.pdf |
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Overview: NSi6602-Q1 High Reliability Isolated Dual-Channel Gate Driver Datasheet (EN) 1.0 Product Overview NSI6602 is a family of high reliability isolated dual-channel gate driver ICs which can be designed to drive power transistor up to 2MHz switching frequency. Each output could source 4A and sink 6A peak current with fast 25ns propagation delay and 5ns maximum delay matching. The NSI6602 provides 3000Vrms isolation in SOP16 (150mil) package, and 5700Vrms isolation in SOP16 (300mil) or SOP14 (300mil) package. System robustness is supported by 150kV/us typical mon-mode transient immunity (CMTI). The driver operates with a maximum supply voltage of 25V, while the input-side accepts from 2.7V to 5V supply voltage. Under voltage lock-out (UVLO) protection is supported by all the power supply voltage pins.
| Part number | NSi6602-Q1 |
|---|---|
| Manufacturer | NOVOSENSE |
| File Size | 1.34 MB |
| Description | High Reliability Isolated Dual-Channel Gate Driver |
| Datasheet | NSi6602-Q1-NOVOSENSE.pdf |
|
|
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| Part Number | Description |
|---|---|
| NSi6602 | High Reliability Isolated Dual-Channel Gate Driver |
| NSI6602NA | High Reliability Isolated Dual-Channel Gate Driver |
| NSI6602NA-Q1 | High Reliability Isolated Dual-Channel Gate Driver |
| NSI6602NB | High Reliability Isolated Dual-Channel Gate Driver |
| NSI6602NB-Q1 | High Reliability Isolated Dual-Channel Gate Driver |
| NSI6602NC | High Reliability Isolated Dual-Channel Gate Driver |
| NSI6602NC-Q1 | High Reliability Isolated Dual-Channel Gate Driver |
| NSI6602ND | High Reliability Isolated Dual-Channel Gate Driver |
| NSI6602V | High Reliability Isolated Dual-Channel Gate Driver |
| NSI6601 | Single-Channel Isolated Gate Driver |