NSI6602V Datasheet PDF (High Reliability Isolated Dual-Channel Gate Driver)

NSI6602V - High Reliability Isolated Dual-Channel Gate Driver

Description

7.1.

INSULATION CHARACTERISTICS14 7.2.

SAFETY-LIMITING VALUES16 7.3.

Features

Isolated dual channel driver.
Input side supply voltage: 3V to 18V.
Driver side supply voltage: up to 25V with UVLO.
6A peak source and 8A peak sink output.
High CMTI: ±150kV/us typical.
33ns typical propagation delay.
6ns maximum delay matching.
8ns maximum pulse width distortion.
Programmable deadtime.
Accepts minimum input pulse width 20ns.
Operation temperature: -40℃~125℃.
RoHS & REACH Compliant Safety Regulatory Approvals.
U.

Datasheet Details

Part number	NSI6602V
Manufacturer	NOVOSENSE
File Size	1.34 MB
Description	High Reliability Isolated Dual-Channel Gate Driver
Datasheet	NSI6602V Datasheet
Additional preview pages of the NSI6602V datasheet.

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Full PDF Text Transcription

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NSI6602V High Reliability Isolated Dual-Channel Gate Driver Datasheet (EN) 1.2 Product Overview NSI6602V is a family of high reliability isolated dualchannel gate driver ICs which can be designed to drive power transistor up to 2MHz switching frequency. Each output could source 6A and sink 8A peak current with fast 33ns propagation delay and 6ns maximum delay matching. The NSI6602V provides 2500Vrms isolation per UL1577 in 5-mm x 5-mm LGA13 package, 3000Vrms isolation in SOP16 or SOP14 package, and 5700Vrms isolation in SOW16 or SOW14 package. System robustness is supported by 150kV/us typical common-mode transient immunity (CMTI). The driver operates with a maximum supply voltage of 25V, while the input-side accepts from 3V to 18V supply voltage.

Published: Dec 11, 2025 |