Datasheet Details
| Part number | NSI6601 |
|---|---|
| Manufacturer | NOVOSENSE |
| File Size | 1.49 MB |
| Description | Single-Channel Isolated Gate Driver |
| Datasheet | NSI6601-NOVOSENSE.pdf |
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Overview: NSI6601 Single-Channel Isolated Gate Driver Datasheet (EN) 1.3 Product Overview The NSI6601 is a single-channel isolated gate driver designed to drive IGBTs, power MOSFETs and SiC MOSFETs in many applications. It provides split outputs that control the rise and fall time individually. It can source and sink 5A peak current. The NSI6601 is available in SOP8 or SOW8 package, which can support 3000VRMS or 5700VRMS isolation per UL1577. System robustness is supported by 150kV/μs minimum mon-mode transient immunity (CMTI). The driver operates with a maximum supply voltage of 32V, while the input-side accepts from 3.1V to 17V supply voltage. Under voltage lock-out (UVLO) protection is supported by all the power supply voltage pins. With high driving current, excellent robustness, wide supply voltage range and fast signal propagation, NSI6601 is suitable for high reliability, power density and efficiency switching power system.
| Part number | NSI6601 |
|---|---|
| Manufacturer | NOVOSENSE |
| File Size | 1.49 MB |
| Description | Single-Channel Isolated Gate Driver |
| Datasheet | NSI6601-NOVOSENSE.pdf |
|
|
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| Part Number | Description |
|---|---|
| NSi6601M | Single-Channel Isolated Gate Driver |
| NSI6601M-Q1 | Single-Channel Isolated Gate Driver |
| NSi6602 | High Reliability Isolated Dual-Channel Gate Driver |
| NSi6602-Q1 | High Reliability Isolated Dual-Channel Gate Driver |
| NSI6602NA | High Reliability Isolated Dual-Channel Gate Driver |
| NSI6602NA-Q1 | High Reliability Isolated Dual-Channel Gate Driver |
| NSI6602NB | High Reliability Isolated Dual-Channel Gate Driver |
| NSI6602NB-Q1 | High Reliability Isolated Dual-Channel Gate Driver |
| NSI6602NC | High Reliability Isolated Dual-Channel Gate Driver |
| NSI6602NC-Q1 | High Reliability Isolated Dual-Channel Gate Driver |