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NTE6090 - Silicon Dual Power Rectifier

General Description

The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal.

Key Features

  • D Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range D Guarding for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature D Guaranteed Reverse Avalanche Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM.
  • . . 45V Working Peak Reverse Voltage, VRWM.
  • . . . 45V.

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Datasheet Details

Part number NTE6090
Manufacturer NTE Electronics (defunct)
File Size 20.64 KB
Description Silicon Dual Power Rectifier
Datasheet download datasheet NTE6090 Datasheet

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Part Number Description
NTE6091 Silicon Schottky Barrier Rectifier
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE6090 Silicon Dual Power Rectifier Description: The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range D Guarding for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature D Guaranteed Reverse Avalanche Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . .