Part 2N6388
Description Silicon NPN Transistor
Category Transistor
Manufacturer NTE Electronics
Size 64.80 KB
NTE Electronics
2N6388

Overview

The 2N6387 and 2N6388 are silicon NPN Darlington power transistors in a TO-220 type package designed for general purpose amplifier and low-speed switching applications.

  • High DC Current Gain: hFE = 2500 Typ
  • Collector-Emitter Sustaining Voltage (@ 100mA): 2N6387: VCEO(sus) = 60V Min 2N6387: VCEO(sus) = 80V Min
  • Low Collector-Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistor