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2N6388 - Silicon NPN Transistor

Download the 2N6388 datasheet PDF. This datasheet also covers the 2N6387 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The 2N6387 and 2N6388 are silicon NPN Darlington power transistors in a TO 220 type package designed for general purpose amplifier and low

speed switching applications.

Key Features

  • D High DC Current Gain: hFE = 2500 Typ D Collector.
  • Emitter Sustaining Voltage (@ 100mA): 2N6387: VCEO(sus) = 60V Min 2N6387: VCEO(sus) = 80V Min D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistor Absolute Maximum Ratings: (Note 1) Collector.
  • Emitter Voltage, VCEO 2N6387.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N6387-NTE.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N6388
Manufacturer NTE Electronics (defunct)
File Size 64.80 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2N6388 Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
2N6385 Silicon NPN Transistor
2N6387 Silicon NPN Transistor
2N6338 Silicon NPN Transistor
2N6028 Programmable Unijunction Transistor
2N6052 Silicon PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N6387 & 2N6388 Silicon NPN Transistors Darlington Power Amplifier TO−220 Type Package Description: The 2N6387 and 2N6388 are silicon NPN Darlington power transistors in a TO−220 type package designed for general purpose amplifier and low−speed switching applications. Features: D High DC Current Gain: hFE = 2500 Typ D Collector−Emitter Sustaining Voltage (@ 100mA): 2N6387: VCEO(sus) = 60V Min 2N6387: VCEO(sus) = 80V Min D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with Built−In Base−Emitter Shunt Resistor Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO 2N6387 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V 2N6388 . . . . . . .