NTE221 Datasheet | NTE Electronics

Description : The NTE221 is an N- channel depletion type, dual- insulated gate, field- effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF- amplifier applications. Features : D Extremely Low Feedback Capacitance D High Power Gain Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain- to- Source Voltage, VDS - - - - - - - - - - 0 to +20V Gate 1- to- Source Voltage, VG1S Continuous (DC) - - - - - - - - - - . . . . +1V to - 8V Peak AC - - - - - - - - - - - - +20V to - 8V Gate 2- to- Source Voltage, VG2S Continuous (DC) - - - - - - - - - . . . - 8V to 40% of VDS Peak AC - - - - - - - - - - - - - 8V to +20V Drain- to- Gate Voltage, VDG1 or VDG2 - - - - - - - - - . . . +20V Pulsed Drain Current (Note 1), ID -...