NTE221 Overview
The NTE221 is an N channel depletion type, dual insulated gate, field effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF amplifier applications.
NTE221 datasheet by NTE Electronics (defunct).
| Part number | NTE221 |
|---|---|
| Datasheet | NTE221_NTEElectronics.pdf |
| File Size | 24.78 KB |
| Manufacturer | NTE Electronics (defunct) |
| Description | MOSFET |
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The NTE221 is an N channel depletion type, dual insulated gate, field effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF amplifier applications.
View all NTE Electronics (defunct) datasheets
| Part Number | Description |
|---|---|
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| NTE222 | Field Effect Transistor |
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