NTE221 Description
The NTE221 is an N channel depletion type, dual insulated gate, field effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF amplifier applications.
- Part: NTE221
- Manufacturer: NTE Electronics
- Size: 24.78 KB
Related NTE Electronics Datasheets
| Part Number | Description |
|---|---|
| NTE22 | Silicon NPN Transistor |
| NTE222 | Field Effect Transistor |
| NTE226 | Germanium PNP Transistor Audio Power Amp |
| NTE227 | Silicon NPN Transistor High Voltage Amp |
| NTE228A | Silicon NPN Transistor High Voltage Amp |