NTE227 Datasheet | NTE Electronics

NTE227 Silicon NPN Transistor High Voltage Amp, Video Output Absolute Maximum Ratings: Collector- Base Voltage, VCBO - - - - - - - - - - . . . . 300V Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . 300V Emitter- Base Voltage, VEBO - - - - - - - - - - - . . . 6V Collector Current, IC - - - - - - - - - - - - . 100m A Power Dissipation (TA = +25°C), PDmax - - - - - - - - . . . 850m W Power Dissipation (TCOLLECTOR LEAD = +25°C), PDmax - - - - - - . . . 2W Maximum Operating Junction Temperature, TJmax - - - - - - . . . . +150°C Thermal Resistance, Junction- to- Case (TCOLLECTOR LEAD = +25°C), Rth JC - - . 62.5°C/W Thermal Resistance, Junction- to- Ambient (TA = +25°C), Rth JA - - - - . . 147°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Breakdown Voltage Collector- Base Breakdown Voltage Emitter- Base Breakdown Voltage Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Transition Frequency Base- Emitter Saturation Voltage Capacitance Symbol ICBO IEBO h FE Test Conditions VCB = 260V VEB = 6V IC = 1m A, VCE = 10V IC = 10m A, VCE = 10V V(BR)CEO IC = 1m A V(BR)CBO IC = 100µA V(BR)EBO IE = 10µA VCE(sat) VBE(sat) f T VBE(sat) Cib IC = 20m A, IB = 2m A IC = 20m A, IB = 2m A IC = 10m A IC = 10m A Min - - 25 40 300 300 6 - -...