NTE222
NTE222 is Field Effect Transistor manufactured by NTE Electronics.
NTE222 Field Effect Transistor Dual Gate N- Channel MOSFET
Absolute Maximum Ratings: Drain- Source Voltage, VDS
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- . . . 25V Drain- Gate Voltage, VDG
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- - 30V Drain Current, ID
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- 50m A Reverse Gate Current, IG
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- 10m A Forward Gate Current, IGF
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- . . 10m A Total Device Dissipation (TA = +25°C), PD
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- - . 360m W Derate Above 25°C
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