NTE222 Description
NTE222 Field Effect Transistor Dual Gate N Channel MOSFET Ratings: Drain Source Voltage, VDS . 25V Drain Gate Voltage, VDG.
- Part: NTE222
- Manufacturer: NTE Electronics
- Size: 24.55 KB
Related NTE Electronics Datasheets
| Part Number | Description |
|---|---|
| NTE22 | Silicon NPN Transistor |
| NTE221 | MOSFET |
| NTE226 | Germanium PNP Transistor Audio Power Amp |
| NTE227 | Silicon NPN Transistor High Voltage Amp |
| NTE228A | Silicon NPN Transistor High Voltage Amp |