NTE2399
NTE2399 is N-CHANNEL MOSFET manufactured by NTE Electronics.
Features
: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C
- -
- -
- -
- -
- -
- - . . . . 3.1A TC = +100°C
- -
- -
- -
- -
- -
- - . . . . 2.0A Pulsed Drain Current (Note 1), IDM
- -
- -
- -
- -
- - . 12A Power Dissipation (TC = +25°C), PD
- -
- -
- -
- -
- . . . 125W Derate Linearly Above 25°C
- -
- -
- -
- -
- . . 1.0W/°C Gate- to- Source Voltage, VGS
- -
- -
- -
- -
- -
- ±20 Single Pulse Avalanche Energy (Note 2), EAS
- -
- -
- -
- . . . . 280m J Avalanche Current (Note 1), IAR
-...
