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NTE2905 - P-Channel MOSFET

Features

  • D Dynamic dv/dt Rating D Repetitive Avalanche Rated D P.
  • Channel D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous TTCC = = Drain Current +25°C.
  • . +100°C . . . . . . (V. . G. S. =.
  • 10V), . ID.

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Datasheet Details

Part number NTE2905
Manufacturer NTE Electronics (defunct)
File Size 95.40 KB
Description P-Channel MOSFET
Datasheet download datasheet NTE2905 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE2905 MOSFET P−Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D P−Channel D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous TTCC = = Drain Current +25°C . . . . . . +100°C . . . . . .(V. .G.S. ..... = .. .. −10V), ...... ...... .ID. . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −12A −7.5A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −48A Power Dissipation (TC = +25°C), PD . . . .
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