NTE2912 Datasheet | NTE Electronics

NTE2912 MOSFET N- Channel, Enhancement Mode High Speed Switch TO220 Type Package Features : D Advanced Process technology D Ultra Low ON- Resistance D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated Description: The NTE2912 Power MOSFET utilizes advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO220 package is universally preferred for all mercial- industrial applications at power dissipation levels to...