NTE335 Overview
The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, mercial and amateur radio equipment to 30MHz.
| Part number | NTE335 |
|---|---|
| Datasheet | NTE335-NTE.pdf |
| File Size | 55.78 KB |
| Manufacturer | NTE Electronics (defunct) |
| Description | Silicon NPN Transistor |
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The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, mercial and amateur radio equipment to 30MHz.
See all NTE Electronics (defunct) datasheets
| Part Number | Description |
|---|---|
| NTE330 | Germanium PNP Transistor |
| NTE3300 | Insulated Gate Bipolar Transistor |
| NTE3301 | Insulated Gate Bipolar Transistor |
| NTE3302 | Insulated Gate Bipolar Transistor |
| NTE3303 | Insulated Gate Bipolar Transistor |
| NTE331 | Silicon Complementary Transistors |
| NTE3310 | Insulated Gate Bipolar Transistor |
| NTE3311 | Insulated Gate Bipolar Transistor |
| NTE3312 | Insulated Gate Bipolar Transistor |
| NTE332 | Silicon Complementary Transistors |