NTE336 Overview
The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, mercial and amateur radio equipment to 30MHz.
NTE336 datasheet by NTE Electronics (defunct).
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | NTE336 |
|---|---|
| Datasheet | NTE336 NTE335 Datasheet (PDF) |
| File Size | 55.78 KB |
| Manufacturer | NTE Electronics (defunct) |
| Description | Silicon NPN Transistor |
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The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, mercial and amateur radio equipment to 30MHz.
View all NTE Electronics (defunct) datasheets
| Part Number | Description |
|---|---|
| NTE330 | Germanium PNP Transistor |
| NTE3300 | Insulated Gate Bipolar Transistor |
| NTE3301 | Insulated Gate Bipolar Transistor |
| NTE3302 | Insulated Gate Bipolar Transistor |
| NTE3303 | Insulated Gate Bipolar Transistor |
| NTE331 | Silicon Complementary Transistors |
| NTE3310 | Insulated Gate Bipolar Transistor |
| NTE3311 | Insulated Gate Bipolar Transistor |
| NTE3312 | Insulated Gate Bipolar Transistor |
| NTE332 | Silicon Complementary Transistors |