NTE342 Overview
Key Specifications
Package: TO-220
Mount Type: Through Hole
Pins: 3
Max Operating Temp: 150 °C
Description
The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) D Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz Application: D 4 to 5 Watt Output Power Amplifiers Applications in VHF band.
