NTE348 Datasheet | NTE Electronics

Description : The NTE348 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF large- signal power amplifier applications required in military and industrial equipment to 300MHz. Features : D Specified 12.5V, 175MHz Characteristics: Output Power = 4W Minimum Gain = 12d B Efficiency = 50% Absolute Maximum Ratings: Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 18V Collector- Emitter Voltage, VCES - - - - - - - - - - . . . . 36V Emitter- Base Voltage, VEBO - - - - - - - - - - - . . . 4V Continuous Collector Current, IC - - - - - - - - - - . . . . 1A Total Device Dissipation (Note 1, TC = +25°C), PD - - - - - - - . . 12W Derate Above 25°C - - - - - - - - - - . . 68.5m W/°C Storage Temperature Range, Tstg - - - - - - - - . . - 65° to +200°C Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter OFF Characteristics Collector- Emitter Breakdown Voltage V(BR)CEO IC = 10m A, IB = 0 V(BR)CES IC = 5m A, VBE = 0 Emitter- Base Breakdown Voltage Collector Cutoff Current V(BR)EBO IE = 1m A, IC = 0 ICBO ICES ON Characteristics DC Current Gain h FE IC = 250m A, VCE = 5V 5 - - VCB = 15V, IE = 0 VCE = 15V, VBE = 0, TC = +55°C 18 36...