NTE349 Datasheet | NTE Electronics

Description : The NTE349 is a silicon NPN transistor in a T72H type package designed primarily for use in 13.6V VHF large- signal amplifier applications required in military and industrial equipment to 240MHz. Features : D Specified 13.6V, 175MHz Characteristics: Output Power = 10W Minimum Gain = 5.2d B Efficiency = 50% Absolute Maximum Ratings: Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 18V Collector- Base Voltage, VCB - - - - - - - - - - - . . 36V Emitter- Base Voltage, VEB - - - - - - - - - - - . . . . 4V Continuous Collector Current, IC - - - - - - - - - - . . . . 2A Total Device Dissipation (TC = +25°C), PD - - - - - - - - . . . . 30W Derate Above 25°C - - - - - - - - - - . . 0171m W/°C Operating Junction Temperature Range, TJ - - - - - - . . . . - 65° to +200°C Storage Temperature Range, Tstg - - -...