NTE350 Overview
Key Specifications
Package: SOT
Mount Type: Stud
Pins: 4
Max Operating Temp: 200 °C
Description
The NTE350 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial equipment to 300MHz. Features: D Specified 12.5V, 175MHz Characteristics: Output Power = 15W Minimum Gain = 6.3dB Efficiency = 60% Parameter OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 20mA, IB = 0 V(BR)CES IC = 10mA, VBE = 0 Emitter–Base Breakdown Voltage Collector Cutoff Current V(BR)EBO IE = 1mA, IC = 0 ICBO ICES ON Characteristics DC Current Gain hFE IC = 500mA, VCE = 5V 5 – – VCB = 15V, IE = 0 VCE = 15V, VBE = 0, TC = +55°C 18 36 4 – – – – – – – – – – 0.5 8 V V V m.
Key Features
- The total device dissipation rating applies only when the device is operated as an RF amplifier
