NTE359 Overview
Key Specifications
Package: SOT
Description
RF Power Transistor 20W - 175 MHz Features: Specified 28 Volt, 175MHz Characteristics Output Power = 20 Watts Minimum Gain = 8.2dB Efficiency = 60% Characterized from 125 to 175MHz Includes Series Equivalent Impedances Parameter Off Characteristics Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current On Characteristics DC Current Gain Hfe IC = 200mA, VCE = 5.0V - 5 - - V(Br)CEO IC = 200mA, IB = 0, Note 1 V(Br)CES IC = 200mA, VBE = 0 V(Br)ebo IE = 10mA, IC = 0 ICBO VCB = 30 V, IE = 0 - - - - 35 65 4 1 - - - - V V V mA Symbol Test Conditions Min Typ Max Unit Note 1.
Key Features
- V(Br)CEO IC = 200mA, IB = 0, Note 1 V(Br)CES IC = 200mA, VBE = 0 V(Br)ebo IE = 10mA, IC = 0 ICBO VCB = 30 V, IE = 0
- V V V mA Symbol Test Conditions Min Typ Max Unit Note
- Pulsed throug
