Datasheet4U Logo Datasheet4U.com

NTE351 - Silicon NPN Transistor

Datasheet Summary

Description

The NTE351 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF large

signal power amplifier applications required in commercial and industrial equipment to 300MHz.

Features

  • D Specified 12.5V, 175MHz Characteristics: Output Power = 25W Minimum Gain = 6.2dB Efficiency = 65% Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 18V Collector.
  • Emitter Voltage, VCES.
  • . . . . 36V Emitter.
  • Base Voltage, VEBO.

📥 Download Datasheet

Datasheet preview – NTE351

Datasheet Details

Part number NTE351
Manufacturer NTE
File Size 19.87 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE351 Datasheet
Additional preview pages of the NTE351 datasheet.

📁 Similar Datasheet

  • NTE30002 - (NTE30002 - NTE30004) Light Emitting Diode (NTE Electronics)
  • NTE30003 - (NTE30002 - NTE30004) Light Emitting Diode (NTE Electronics)
  • NTE30004 - (NTE30002 - NTE30004) Light Emitting Diode (NTE Electronics)
  • NTE30005 - (NTE30005 - NTE30007) Light Emitting Diode (NTE Electronics)
  • NTE30006 - (NTE30005 - NTE30007) Light Emitting Diode (NTE Electronics)
  • NTE30007 - (NTE30005 - NTE30007) Light Emitting Diode (NTE Electronics)
  • NTE30008 - (NTE30008 - NTE30010) Light Emitting Diode (NTE Electronics)
  • NTE30009 - (NTE30008 - NTE30010) Light Emitting Diode (NTE Electronics)
  • NTE30010 - (NTE30008 - NTE30010) Light Emitting Diode (NTE Electronics)
  • NTE30011 - (NTE30011 - NTE30013) Light Emitting Diode (NTE Electronics)
Other Datasheets by NTE
  • NTE350 - Silicon NPN Transistor
  • NTE352 - Silicon Complementary Transistors
  • NTE353 - Silicon NPN Transistor
  • NTE354 - Silicon NPN Transistor
  • NTE355 - Silicon NPN Transistor
  • NTE359 - Silicon NPN Transistor RF & Microwave Transistor
  • NTE30 - Silicon Complementary Transistors
  • NTE300 - Silicon Complementary Transistors Audio Power Amplifier

Full PDF Text Transcription

Click to expand full text
NTE351 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE351 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial equipment to 300MHz. Features: D Specified 12.5V, 175MHz Characteristics: Output Power = 25W Minimum Gain = 6.2dB Efficiency = 65% Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Published: |