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NTE384 - Silicon NPN Transistor

General Description

The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a multiple

emitter site structure.

epitaxial construction maximizes the volt

ampere characteristic of the device and provides fast switching speeds.

emi

Key Features

  • D Maximum Safe.
  • Area.
  • of.
  • Operation D Low Saturation Voltages D High Voltage Rating: VCER(sus) = 375V D High Dissipation Rating: PT = 45W Absolute Maximum Ratings: Collector.
  • Base Voltage, VCBO.
  • . . . . 375V Collector.
  • Emitter Sustaining Voltage With Base Open, VCEO(sus).
  • . 350V With R.

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Datasheet Details

Part number NTE384
Manufacturer NTE Electronics (defunct)
File Size 22.54 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE384 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE384 Silicon NPN Transistor High Voltage Power Amp/Switch Description: The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a multiple–emitter site structure. Multiple–epitaxial construction maximizes the volt–ampere characteristic of the device and provides fast switching speeds. Multiple–emitter design ensures uniform current flow throughout the structure, which produces a high IS/b and a large safe–operation–area. The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line. The leakage current is specified at 450V; therefore the device can also be used in a series bridge configuration on a 220V line. The VEBO rating of 9V eases requirements on the drive transformer in inverter applications.