NTE389 Datasheet | NTE Electronics

Description : The NTE389 is a high voltage silicon NPN power transistor in a TO3 type case designed for use in CRT horizontal deflection circuits. Features : D Collector- Emitter Voltage: VCEX = 1500V D Glass Passivated Base- Collector Junction D Forward Bias Safe Operating Area @ 50µs = 20A, 300V D Switching Times with Inductive Loads: tf = 0.5µs (Typ) @ IC = 3A Absolute Maximum Ratings: Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . 750V Collector- Emitter Voltage, VCEX - - - - - - - - - - . . 1500V Emitter- Base Voltage, VEBO - - - - - - - - - - - . . . 5V Continuous Collector Current, IC - - - - - - - - - - . . . . 4A Continuous Base Current, IB - - - - - - - - - - - . . . 3A Continouos Emitter Current, IE - - - - - - - - - - - . 7A Total Power Dissipation, PD TC = +25°C - - - - - - -...