BLF6G38-10
description
10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.
Table 1. Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1]
[1] [2] f (MHz) 3400 to 3600
VDS (V) 28
PL(AV) (W) 2
Gp (d B) 14
ηD (%) 20
ACPR885k (d Bc)
- 49[2]
ACPR1980k (d Bc)
- 64[2]
Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8
- 13). PAR = 9.7 d B at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz. Measured within 30 k Hz bandwidth.
CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8
- 13]. PAR = 9.7 d B at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and an IDq of 130 m A: I Qualified up to a...
