Download BLF6G38-100 Datasheet PDF
NXP Semiconductors
BLF6G38-100
description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 3400 to 3600 VDS PL(AV) (V) 28 (W) 18.5 PL(p) Gp (W) 130 13 ηD ACPR885k (d Bc) ACPR1980k (d Bc) - 65[2] (d B) (%) - 47.5[2] Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 d B at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz. Measured within 30 k Hz bandwidth. CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 d B at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500...