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BLF6G38-10G - WiMAX power LDMOS transistor

Download the BLF6G38-10G datasheet PDF. This datasheet also covers the BLF6G38-10 variant, as both devices belong to the same wimax power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.

Table 1.

Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit.

Key Features

  • I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and an IDq of 130 mA: I Qualified up to a maximum VDS operation of 32 V I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation I Internally matched for ease of use I Low gold plating thicknes.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF6G38-10_NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BLF6G38-10G Power LDMOS transistor Ampleon
BLF6G38-10 Power LDMOS transistor Ampleon
BLF6G38-25 Power LDMOS transistor Ampleon
BLF6G38-50 Power LDMOS transistor Ampleon
BLF6G38LS-50 Power LDMOS transistor Ampleon

Other Datasheets by NXP Semiconductors

Part Number Description
BLF6G38-10 WiMAX power LDMOS transistor
BLF6G38-100 WiMAX power LDMOS transistor
BLF6G38-25 WiMAX power LDMOS transistor
BLF6G38-50 WiMAX power LDMOS transistor
BLF6G38LS-100 WiMAX power LDMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 3400 to 3600 VDS (V) 28 PL(AV) (W) 2 Gp (dB) 14 ηD (%) 20 ACPR885k (dBc) −49[2] ACPR1980k (dBc) −64[2] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz. Measured within 30 kHz bandwidth. CAUTION This device is sensitive to ElectroStatic Discharge (ESD).