Datasheet Summary
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TrenchMOS™ standard level FET
M3D300
Rev. 02
- 22 January 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.2 Features s Very low on-state resistance s 185 °C rated s Q101 pliant s Standard level patible.
1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching.
1.4 Quick reference data s EDS(AL)S ≤ 329 mJ s ID ≤ 75 A s RDSon = 5.9 mΩ (typ) s Ptot ≤ 167 W.
2. Pinning information
Table 1: Pin 1 2 3 mb Pinning
- SOT428 (D-PAK), simplified...