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BUK7210-55B - N-Channel MOSFET

General Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Key Features

  • 185 °C rated.
  • Q101 compliant.
  • Standard level compatible.
  • Very low on-state resistance 1.3.

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Full PDF Text Transcription (Reference)

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BUK7210-55B N-channel TrenchMOS standard level FET Rev. 01 — 11 December 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ 185 °C rated „ Q101 compliant „ Standard level compatible „ Very low on-state resistance 1.3 Applications „ 12 V and 24 V loads „ Automotive systems „ General purpose power switching „ Motors, lamps and solenoids 1.4 Quick reference data Table 1.