BUK7226-75A Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
BUK7226-75A Key Features
- 175 °C rated
- Q101 pliant
- Low on-state resistance
- Standard level patible