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BUK7226-75A - N-channel TrenchMOS standard level FET

General Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Key Features

  • 175 °C rated.
  • Q101 compliant.
  • Low on-state resistance.
  • Standard level compatible 1.3.

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Full PDF Text Transcription (Reference)

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BUK7226-75A N-channel TrenchMOS standard level FET Rev. 02 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features „ 175 °C rated „ Q101 compliant „ Low on-state resistance „ Standard level compatible 1.3 Applications „ 12 V, 24 V and 42 V loads „ General purpose power switching „ Automotive systems „ Motors, lamps and solenoids 1.4 Quick reference data Table 1.