BUK7575-100A Datasheet | NXP Semiconductors

description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - Low conduction losses due to low on-state resistance - Q101 pliant - Suitable for standard level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V, 24 V and 42 V loads - Automotive and general purpose power switching - Motors, lamps and solenoids 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions VGS = 10 V; Tmb = 25 °C; see Figure 1 and 3 Tmb = 25 °C; see Figure 2 Min Typ Max 100 23 99 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 13 A; Tj = 175 °C; see Figure 12 and 13 VGS = 10 V; ID = 13 A; Tj = 25 °C; see Figure 12 and 13 187 mΩ ID = 14 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped 100 m J - 64 75 mΩ NXP Semiconductors N-channel Trench MOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain mb Simplified outline Graphic symbol G mbb076 1 2 3 SOT78A (TO-220AB) 3. Ordering information Table 3. Ordering information Package Name BUK7575-100A TO-220AB Description Version plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78A TO-220AB Type number BUK7575-100A_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 - 30 July 2009 2 of 13 NXP Semiconductors N-channel Trench MOS standard level FET 4. Limiting values Table 4. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM...