BUK953R2-40B Datasheet | NXP Semiconductors

description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits - - - - AEC Q101 pliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 3. Applications - - - - 12 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 2; Fig. 3 Tmb = 25 °C; Fig. 1 VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11; Fig. 12 Dynamic characteristics QGD gate-drain charge VGS = 5 V; ID = 25 A; VDS = 32 V; Tj = 25 °C; Fig. 13 37 n C [1] Min - Typ - Max 40 100 300 Unit V A W Static characteristics drain-source on-state resistance 2.4 2.7 2.8 3.2 mΩ mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors N-channel Trench MOS logic level FET Symbol EDS(AL)S Parameter non-repetitive drainsource avalanche energy [1] Conditions ID = 100 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Min - Typ - Max 1.2 Unit J Avalanche ruggedness All individual parts of device must be ≤ 175 °C to achieve maximum current rating. 5. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain G mbb076 Simplified outline mb Graphic symbol 1 2...