BUK953R5-60E Datasheet | NXP Semiconductors

description Logic level N-channel MOSFET in a SOT78 package using Trench MOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits - AEC Q101 pliant - Repetitive avalanche rated - Suitable for thermally demanding environments due to 175 °C rating - True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C 1.3 Applications - 12 V Automotive systems - Motors, lamps and solenoid control - Start-Stop micro-hybrid applications - Transmission control - Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11 [1] Min - Typ - Max 60 120 293 Unit V A W Static characteristics drain-source on-state resistance gate-drain charge 2.87 3.7 mΩ Dynamic characteristics QGD VGS = 5 V; ID = 25 A; VDS = 48 V; Fig. 13; Fig. 14 [1] Continuous current is limited by package. - 31 - n C Scan or click this QR code to view the latest information for this product NXP Semiconductors N-channel Trench MOS logic level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain G mbb076 Simplified outline mb Graphic symbol 1 2 3 TO-220AB (SOT78A) 3. Ordering information Table 3. Ordering information Package Name BUK953R5-60E TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78A Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS Parameter drain-source voltage drain-gate voltage gate-source voltage Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tj ≤ 175 °C;...