BUK969E3R2-40B Overview
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.
BUK969E3R2-40B datasheet by NXP Semiconductors.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BUK969E3R2-40B |
|---|---|
| Datasheet | BUK969E3R2-40B BUK959E3R2-40B Datasheet (PDF) |
| File Size | 331.43 KB |
| Manufacturer | NXP Semiconductors |
| Description | TrenchMOS logic level FET |
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N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.
View all NXP Semiconductors datasheets
| Part Number | Description |
|---|---|
| BUK969R0-60E | N-Channel MOSFET |
| BUK969R3-100E | N-channel TrenchMOS logic level FET |
| BUK9606-40B | N-Channel MOSFET |
| BUK9606-55A | TrenchMOS logic level FET |
| BUK9606-75B | N-channel TrenchMOS logic level FET |
| BUK9608-55B | N-Channel MOSFET |
| BUK9609-75A | N-channel TrenchMOS logic level FET |
| BUK9610-55A | N-Channel MOSFET |
| BUK9611-55A | N-Channel MOSFET |
| BUK9611-80E | N-channel TrenchMOS logic level FET |