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PMWD15UN - Dual N-channel uTrenchMOS ultra low level FET

General Description

Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.

Key Features

  • s Surface mounting package s Very low threshold voltage s Low profile s Fast switching 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMWD15UN Rev. 04 — 5 April 2005 www.DataSheet4U.com Dual N-channel µTrenchMOS™ ultra low level FET Product data sheet 1. Product profile 1.1 General description Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. 1.2 Features s Surface mounting package s Very low threshold voltage s Low profile s Fast switching 1.3 Applications s Portable appliances s Battery management s PCMCIA cards s Load switching 1.4 Quick reference data s VDS ≤ 20 V s Ptot ≤ 4.2 W s ID ≤ 11.6 A s RDSon ≤ 18.5 mΩ 2.