PMWD18UN
PMWD18UN is Dual N-channel uTrenchMOS ultra low level FET manufactured by NXP Semiconductors.
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M3D647
Dual N-channel µTrenchMOS™ ultra low level FET
Rev. 02
- 23 February 2004 Product data
1. Product profile
1.1 Description
Dual mon drain N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features s Surface mounted package s Very low threshold s Low profile s Fast switching.
1.3 Applications s Portable appliances s Battery management s PCMCIA cards s Load switching.
1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 2.3 W s ID ≤ 7.8 A s RDSon ≤ 21.5 mΩ.
2. Pinning information
Table 1: Pin 1,8 2,3 4 5 6,7 Pinning
- SOT530-1 (TSSOP8), simplified outline and symbol Description drain (d) source1 (s1)...
