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PMWD18UN - Dual N-channel uTrenchMOS ultra low level FET

General Description

Dual common drain N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Key Features

  • s Surface mounted package s Very low threshold s Low profile s Fast switching. 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PMWD18UN M3D647 Dual N-channel µTrenchMOS™ ultra low level FET Rev. 02 — 23 February 2004 Product data 1. Product profile 1.1 Description Dual common drain N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Surface mounted package s Very low threshold s Low profile s Fast switching. 1.3 Applications s Portable appliances s Battery management s PCMCIA cards s Load switching. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 2.3 W s ID ≤ 7.8 A s RDSon ≤ 21.5 mΩ. 2.