PMWD19UN
PMWD19UN is Dual uTrenchMOS ultra low level FET manufactured by NXP Semiconductors.
Dual µTrenchMOS™ ultra low level FET
Rev. 01
- 20 December 2002
M3D647
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Product data
1. Product profile
1.1 Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMWD19UN in SOT530-1 (TSSOP8).
1.2 Features s Surface mounting package s Very low threshold s Low profile s Fast switching.
1.3 Applications s Portable appliances s Battery management s PCMCIA cards s Load switching.
1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 2.3 W s ID ≤ 5.6 A s RDSon ≤ 23 mΩ.
2. Pinning information
Table 1: Pin 1 2,3 4 5 6,7 8 Pinning
- SOT530-1, simplified outline and symbol Description...
