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PMWD19UN - Dual uTrenchMOS ultra low level FET

General Description

Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Product availability: PMWD19UN in SOT530-1 (TSSOP8).

Key Features

  • s Surface mounting package s Very low threshold s Low profile s Fast switching. 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMWD19UN Dual µTrenchMOS™ ultra low level FET Rev. 01 — 20 December 2002 M3D647 www.DataSheet4U.com Product data 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMWD19UN in SOT530-1 (TSSOP8). 1.2 Features s Surface mounting package s Very low threshold s Low profile s Fast switching. 1.3 Applications s Portable appliances s Battery management s PCMCIA cards s Load switching. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 2.3 W s ID ≤ 5.6 A s RDSon ≤ 23 mΩ. 2.