PSMN2R0-30PL Datasheet | NXP Semiconductors

description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for logic level gate drive sources 1.3 Applications - DC-to-DC converters - Load switiching - Motor control - Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min Typ Max 30 100 211 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation gate-drain charge total gate charge Symbol Parameter Dynamic characteristics QGD ..net QG(tot) VGS = 4.5 V; ID = 25 A; VDS = 12 V; see Figure 13; see Figure 14 VGS = 4.5 V; ID = 15 A; Tj = 25 °C VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 12 [2] - 16 55 - n C n C Static characteristics RDSon drain-source on-state resistance 2 1.7 2.8 2.1 mΩ mΩ [1] [2] Continuous current is limited by package. Measured 3 mm from package. NXP Semiconductors N-channel 30 V 2.1 mΩ logic level MOSFET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain mb Simplified outline Graphic symbol G mbb076 1 2 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Package Name PSMN2R0-30PL TO-220AB Description Version plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78 TO-220AB Type number ..net PSMN2R0-30PL_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev....