PSMN2R0-30YLE Datasheet | NXP Semiconductors

description Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - Enhanced forward biased safe operating area for superior linear mode operation - Very low Rdson for low conduction losses 1.3 Applications - Electronic fuse - Hot swap - Load switch - Soft start 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 12 VGS = 4.5 V; ID = 25 A; Tj = 25 °C; Fig. 12 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 25 A; VDS = 15 V; Fig. 14; Fig. 15 VGS = 10 V; ID = 25 A; VDS = 15 V; Fig. 14; Fig. 15 87 n C 13.8 n C 3 3.5 mΩ [1] Min - Typ - Max 30 100 272 Unit V A W Static characteristics drain-source on-state resistance 1.7 2 mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors N-channel 30 V 2 mΩ logic level MOSFET in LFPAK Symbol EDS(AL)S Parameter non-repetitive drainsource avalanche energy [1] Conditions VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 30 V; unclamped; RGS = 50 Ω; Fig. 3 Min - Typ - Max 370 Unit m J Avalanche ruggedness Capped at 100A due to package 2. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain 1 2 3 4 G mbb076 Simplified outline mb Graphic symbol LFPAK; Power SO8 (SOT669) 3. Ordering...