PSMN2R0-30YL
PSMN2R0-30YL is N-channel MOSFET manufactured by Nexperia.
description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in industrial and munications applications.
1.2 Features and benefits
- High efficiency due to low switching and conduction losses
- Suitable for logic level gate drive sources
1.3 Applications
- Class-D amplifiers
- DC-to-DC converters
- Motor control
- Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol VDS
Parameter drain-source voltage
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3
Ptot total power
Tmb = 25 °C; see Figure 2 dissipation
Tj junction temperature
Static characteristics
RDSon drain-source on-state resistance
VGS = 10 V; ID = 15 A; Tj = 25 °C
Dynamic characteristics
QGD gate-drain charge VGS = 4.5 V; ID = 10 A;
VDS = 12 V; see Figure 14; see Figure 15
Min Typ Max Unit
- - 30 V
[1]
- - 100 A
- - 97 W
-55
- 175 °C
- 1.55 2 mΩ
- 7.5
- n C
Nexperia
N-channel 30 V 2 mΩ logic level MOSFET in LFPAK
Table 1. Quick reference data …continued
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