PSMN2R0-30PL Datasheet | Nexperia

description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for logic level gate drive sources 1.3 Applications - DC-to-DC converters - Load switiching - Motor control - Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 30 V ID drain current Tmb = 25 °C; VGS = 10 V; [1] - - 100 A see Figure 1 Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 211 W Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 25 A; VDS = 12 V; see Figure 13; see Figure 14 - 16 - n C - 55 - n C Static characteristics RDSon drain-source on-state resistance VGS = 4.5 V; ID = 15 A; Tj = 25 °C VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 12 [2] - 2 2.8 mΩ 1.7 2.1 mΩ [1] Continuous current is limited by package. [2] Measured 3 mm from package. Nexperia 2. Pinning information Table 2. Pinning...