PSMN2R0-30YLE
PSMN2R0-30YLE is N-channel MOSFET manufactured by Nexperia.
description
Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment.
2. Features and benefits
- Enhanced forward biased safe operating area for superior linear mode operation
- Very low Rdson for low conduction losses
3. Applications
- Electronic fuse
- Hot swap
- Load switch
- Soft start
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
ID drain current
VGS = 10 V; Tmb = 100 °C; Fig. 2
[1]
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Tj junction temperature
Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; resistance
Fig. 12
VGS = 4.5 V; ID = 25 A; Tj = 25 °C; Fig. 12
Dynamic characteristics
QGD gate-drain charge
ID = 25 A; VDS = 15 V; VGS = 4.5 V;
Fig. 14; Fig. 15
QG(tot) total gate charge
ID = 25 A; VDS = 15 V; VGS = 10 V; Fig. 14; Fig. 15
Avalanche ruggedness
EDS(AL)S non-repetitive drainsource avalanche energy
ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 4
Min Typ Max Unit
- -
- -
100 A
-...
