PSMN2R0-30YL Datasheet | NXP Semiconductors

description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in industrial and munications applications. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for logic level gate drive sources 1.3 Applications - Class-D amplifiers - DC-to-DC converters - Motor control - Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3; Tmb = 25 °C; see Figure 2 [1] Min Typ Max 30 100 97 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C drain current total power dissipation gate-drain charge Symbol Parameter Dynamic characteristics QGD VGS = 4.5 V; ID = 10 A; VDS = 12 V; see Figure 14; see Figure 15 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 12 7.5 n C Static characteristics RDSon drain-source on-state resistance 1.56 2 mΩ [1] Continuous current is limited by package. .. NXP Semiconductors N-channel Trench MOS logic level FET 2. Pinning information Table 2. Pin 1 2 3 4 mb S S S G D Pinning information Symbol Description source source source gate mounting base; connected to drain mbb076 Simplified outline mb Graphic symbol 1 2 3 4 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name PSMN2R0-30YL LFPAK Description Version Plastic single-ended surface-mounted package (LFPAK); SOT669 4 leads 4. Limiting values Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current VGS = 10 V; Tmb = 100 °C; see Figure 1; VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3; IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature source current peak source current non-repetitive drain-source avalanche energy [1] In accordance with...