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74AUP2G80 - Low-power dual D-type flip-flop

General Description

The 74AUP2G80 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families.

Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V.

Key Features

  • s Wide supply voltage range from 0.8 V to 3.6 V s High noise immunity s Complies with JEDEC standards: x JESD8-12 (0.8 V to 1.3 V) x JESD8-11 (0.9 V to 1.65 V) x JESD8-7 (1.2 V to 1.95 V) x JESD8-5 (1.8 V to 2.7 V) x JESD8-B (2.7 V to 3.6 V) s ESD protection: x HBM JESD22-A114-D Class 3A exceeds 5000 V x MM JESD22-A115-A exceeds 200 V x CDM JESD22-C101-C exceeds 1000 V s Low static power consumption; ICC = 0.9 µA (maximum) s Latch-up performance exceeds 100 mA per JESD 78 Class II s Inputs accep.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com 74AUP2G80 Low-power dual D-type flip-flop; positive-edge trigger Rev. 01 — 25 August 2006 Product data sheet 1. General description The 74AUP2G80 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial Power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.