NXP Semiconductors A3M36SL039
The A3M36SL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. The field-proven LDMOS power amplifiers are designed for TDD LTE and 5G systems. The module integrates an autobias feature with the option to overwrite production settings.| Part No. | A3M36SL039 |
|---|---|
| Datasheet | A3M36SL039 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Airfast Power Amplifier Module |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Advanced high performance in-package Doherty● Fully matched (50 ohm input/output, DC blocked)
● Designed for low complexity digital linearization systems
● Autobias on power up
● Temperature sensing
● Digital interface (I2C or SPI)
● Embedded registers and DACs for setting bias conditions
● Tx Enable control pin for TDD operation 3 Typical performance Table 1. 3400–3800 MHz — Typical LTE performance Pout = 8 W Avg., VDD = 29 Vdc, 1 × 20 MHz LTE, Input Signal PAR = 8 dB @ 0.01% probability on CCDF. [1] Carrier Center Frequency Gain (dB) ACPR (dBc) 3410 MHz 29.5 –28.6 3600 MHz 29.8 –30.9 3790 MHz 29.4 –29.1 [1] All data measured with device soldered in NXP reference circuit. PAE (%) 36.7 38.3 36.4 NXP Semiconductors 4 Pinning information 4.1 Pinning A3M36SL039 Airfast Power Amplifier Module with Autobias Control Figure 1. Pin configuration A3M36SL039 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 July 2024 © 2024 NXP B.V.
