A3M36SL039
A3M36SL039 is Airfast Power Amplifier Module manufactured by NXP Semiconductors.
description
The A3M36SL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field-proven LDMOS power amplifiers are designed for TDD LTE and 5G systems. The module integrates an autobias feature with the option to overwrite production settings. Autobias automatically sets and regulates transistor bias over temperature upon power up. An integrated sensor for monitoring temperature is also present. munications to the module can be acplished via either I2C or SPI.
2 Features and benefits
- Advanced high performance in-package Doherty
- Fully matched (50 ohm input/output, DC blocked)
- Designed for low plexity digital linearization systems
- Autobias on power up
- Temperature sensing
- Digital interface (I2C or SPI)
- Embedded registers and DACs for setting bias conditions
- Tx Enable control pin for TDD operation
3 Typical performance
Table 1. 3400- 3800 MHz
- Typical LTE performance Pout = 8 W Avg., VDD = 29 Vdc, 1 × 20 MHz LTE, Input Signal PAR = 8 d B @ 0.01% probability on CCDF. [1]
Carrier Center Frequency
Gain (d B)
ACPR (d Bc)
3410 MHz
- 28.6
3600 MHz
- 30.9
3790 MHz
- 29.1
[1] All data measured with device soldered in NXP reference circuit.
PAE (%) 36.7
NXP Semiconductors
4 Pinning information
4.1 Pinning
Airfast Power Amplifier Module with Autobias Control
Figure 1. Pin configuration
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2
- 1 July 2024
© 2024 NXP B.V. All rights...
