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AFV141KH - RF Power LDMOS Transistors

Key Features

  • Internally Input and Output Matched for Broadband Operation and Ease of Use.
  • Device Can Be Used in a Single--Ended, Push--Pull or Quadrature Configuration.
  • Qualified up to a Maximum of 50 VDD Operation.
  • High Ruggedness, Handles > 20:1 VSWR.
  • Integrated ESD Protection with Greater Negative Voltage Range for Improved Class C Operation and Gate Voltage Pulsing.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: AFV141KH Rev. 0, 4/2016 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These RF power devices are designed for commercial applications operating at frequencies from 1200 to 1400 MHz such as commercial L--Band radars. The devices are suitable for use in pulse applications. Typical Pulse Performance: In 1200–1400 MHz reference circuit, VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pin = 25 W Frequency (MHz) Signal Type Pout Gps D (W) (dB) (%) 1200 Pulse 950 Peak 15.8 46.5 (300 sec, 12% Duty Cycle) 1300 1120 Peak 16.5 47.5 1400 1000 Peak 16.1 46.