AFV141KH Overview
Freescale Semiconductor Technical Data Document Number: 0, 4/2016 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These RF power devices are designed for mercial applications operating at frequencies from 1200 to 1400 MHz such as mercial L--Band radars. The devices are suitable for use in pulse applications.
AFV141KH Key Features
- Internally Input and Output Matched for Broadband Operation and Ease of Use
- Device Can Be Used in a Single--Ended, Push--Pull or Quadrature Configuration
- Qualified up to a Maximum of 50 VDD Operation
- High Ruggedness, Handles > 20:1 VSWR
- Integrated ESD Protection with Greater Negative Voltage Range for Improved
- Characterized with Series Equivalent Large--Signal Impedance Parameters