Click to expand full text
Freescale Semiconductor Technical Data
Document Number: AFV141KH Rev. 0, 4/2016
RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
These RF power devices are designed for commercial applications operating at frequencies from 1200 to 1400 MHz such as commercial L--Band radars. The devices are suitable for use in pulse applications.
Typical Pulse Performance: In 1200–1400 MHz reference circuit, VDD = 50 Vdc,
IDQ(A+B) = 100 mA, Pin = 25 W
Frequency (MHz)
Signal Type
Pout
Gps
D
(W)
(dB)
(%)
1200
Pulse
950 Peak
15.8
46.5
(300 sec, 12% Duty Cycle)
1300
1120 Peak
16.5
47.5
1400
1000 Peak 16.1
46.
AFV141KHS Datasheet
