AFV141KGS Datasheet | NXP Semiconductors

Features - Internally Input and Output Matched for Broadband Operation and Ease of Use - Device Can Be Used in a Single--Ended, Push--Pull or Quadrature Configuration - Qualified up to a Maximum of 50 VDD Operation - High Ruggedness, Handles > 20:1 VSWR - Integrated ESD Protection with Greater Negative Voltage Range for Improved Class C Operation and Gate Voltage Pulsing - Characterized with Series Equivalent Large--Signal Impedance Parameters Typical Applications - mercial L--Band Radar Systems NI--1230S--4S AFV141KHS NI--1230GS--4L AFV141KGS Gate A 3 1 Drain A Gate B 4 2 Drain B (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections  Freescale Semiconductor, Inc., 2016. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFV141KH AFV141KHS AFV141KGS 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Range Operating Junction Temperature Range (1,2) Total Device Dissipation @ TC = 25C Derate above 25C VDSS VGS Tstg TC TJ PD - 0.5, +105 - 6.0, +10 - 65 to +150 - 40 to +150 - 40 to +225 910 4.55 Vdc Vdc C C C W...