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AFV141KGS - RF Power LDMOS Transistors

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NXP

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AFV141KGS RF Power LDMOS Transistors by NXP - Datasheet Preview — Datasheet preview – AFV141KGS

Datasheet Details

Part number	AFV141KGS
Manufacturer	NXP
File Size	428.85 KB
Description	RF Power LDMOS Transistors
Datasheet	AFV141KGS Datasheet
Note	This datasheet PDF includes multiple part numbers: AFV141KGS, AFV141KH. Please refer to the document for exact specifications by model.
Additional preview pages of the AFV141KGS datasheet.

Product details

Features

Internally Input and Output Matched for Broadband Operation and Ease of Use.
Device Can Be Used in a Single--Ended, Push--Pull or Quadrature Configuration.
Qualified up to a Maximum of 50 VDD Operation.
High Ruggedness, Handles > 20:1 VSWR.
Integrated ESD Protection with Greater Negative Voltage Range for Improved Class C Operation and Gate Voltage Pulsing.
Characterized with Series Equivalent Large--Signal Impedance Parameters Typical.

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Published: Nov 19, 2024 |