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AFV141KGS - RF Power LDMOS Transistors

Download the AFV141KGS datasheet PDF. This datasheet also covers the AFV141KH variant, as both devices belong to the same rf power ldmos transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Internally Input and Output Matched for Broadband Operation and Ease of Use.
  • Device Can Be Used in a Single--Ended, Push--Pull or Quadrature Configuration.
  • Qualified up to a Maximum of 50 VDD Operation.
  • High Ruggedness, Handles > 20:1 VSWR.
  • Integrated ESD Protection with Greater Negative Voltage Range for Improved Class C Operation and Gate Voltage Pulsing.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters Typical.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFV141KH-NXP.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by NXP Semiconductors

Part Number Description
AFV141KH RF Power LDMOS Transistors
AFV141KHS RF Power LDMOS Transistors
AFV10700GS RF Power LDMOS Transistors
AFV10700H RF Power LDMOS Transistors
AFV10700HS RF Power LDMOS Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: AFV141KH Rev. 0, 4/2016 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These RF power devices are designed for commercial applications operating at frequencies from 1200 to 1400 MHz such as commercial L--Band radars. The devices are suitable for use in pulse applications. Typical Pulse Performance: In 1200–1400 MHz reference circuit, VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pin = 25 W Frequency (MHz) Signal Type Pout Gps D (W) (dB) (%) 1200 Pulse 950 Peak 15.8 46.5 (300 sec, 12% Duty Cycle) 1300 1120 Peak 16.5 47.5 1400 1000 Peak 16.1 46.