BAL99W Datasheet | NXP Semiconductors

FEATURES - Very small plastic SMD envelope - High switching speed: max. 4 ns - Continuous reverse voltage: max. 75 V - Repetitive peak reverse voltage: max. 85 V - Repetitive peak forward current: max. 500 m A. APPLICATIONS - High-speed switching in e.g. surface mounted circuits. 3 Top view Marking code: JF. DESCRIPTION The BAL99W is a high-speed switching diode fabricated in planar technology, and encapsulated in the very small plastic SMD SOT323 package. PINNING PIN 1 2 3 DESCRIPTION not connected cathode anode 1 n.c. 3 MAM080 Fig.1 Simplified outline (SOT323; SC-70) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 - - - - - 65 - 4 1 0.5 200 +150 150 A A A m W °C °C see Fig.2; note 1 CONDITIONS - - - - MIN. MAX. 85 75 150 500 V V m A m A UNIT 1999 May 06 Philips Semiconductors Product specification High-speed diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 1 m A IF = 10 m A IF = 50 m A IF = 150 m A IR reverse current see Fig.5 VR = 25 V VR = 75 V VR = 25 V; Tj = 150 °C VR = 75 V; Tj = 150 °C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 30 1 30 50 1.5 715 855 1 1.25 CONDITIONS MAX. UNIT m V m V V V n A µA µA µA p F ns when switched from IF = 10 m A to 4 IR = 10 m A; RL = 100 Ω; measured at IR = 1 m A; see Fig.7 when switched from IF = 10 m A; tr = 20 ns; see Fig.8 1.75 Vfr forward recovery voltage THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4...