NXP Semiconductors BAQ806
The well-defined void-free case is of a transfer-moulded thermo-setting plastic.| Part No. | BAQ806 |
|---|---|
| Datasheet | BAQ806 Download |
| Manufacturer |  NXP Semiconductors |
| Description | AM PIN diode |
| Buy | Stock & Price |
FEATURES
● Glass passivated● High maximum operating temperature
● Low leakage current
● Excellent stability
● UL 94V-O classified plastic package
● Shipped in 12 mm embossed tape.
APPLICATIONS
● RF attenuator with low distortion for frequencies above 100 kHz. handbook, 4 columns BAQ806DESCRIPTION
DO-214AC surface mountable package with glass passivated chip. cathode band k a Top view Side view MSA474 Fig.1 Simplified outline (SOD106) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR Tstg Tj PARAMETER repetitive peak reverse voltage continuous reverse voltage storage temperature junction temperature MIN. − − −65 −65 MAX. 100 100 +175 +150 V V °C °C UNIT 1998 Aug 03 2 Philips Semiconductors Product specification AM PIN diodeELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 100 mA; see Figs 2 and 3 IF = 100 mA; Tj = Tj max; see Figs 2 and 3 IR τ reverse current charge carrier life time VR = 100 V; see Fig.
