NXP Semiconductors BAS17
This document contains data from the objective specification for product development. This document contains data from the preliminary specification.| Part No. | BAS17 |
|---|---|
| Datasheet | BAS17 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Low-voltage stabistor |
| Buy | Stock & Price |
FEATURES
● Low-voltage stabilization● Forward voltage range: 580 to 960 mV
● Total power dissipation: max. 250 mW.
APPLICATIONS
● Low-voltage stabilization e.g. – Bias stabilizer in class-B output stages – Clipping – Clamping – Meter protection.DESCRIPTION
Low-voltage stabilization diode in a small SOT23 plastic package. PINNING PIN 1 2 3DESCRIPTION
anode not connected cathode handbook, halfpa2ge 1 2 n.c. 3 1 3 MAM185 MARKING TYPE NUMBER BAS17 MARKING CODE(1) ∗A9 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. Fig.1 Simplified outline (SOT23), pin configuration and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VR continuous reverse voltage IF continuous forward current Ptot total power dissipation Tstg storage temperature Tj junction temperature CONDITIONS Tamb = 25 °C MIN. − − − −65 − MAX. 5 200 250 +150 150 UNIT V mA mW °C °C 2003 Mar 25 2 NXP Semiconductors Low-voltage stabistor Product data sheet BAS17ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
